Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates [electronic resource].
- Published:
- Arlington, Va. : United States. Air Force. Office of Scientific Research, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- 12 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory, United States. Air Force. Office of Scientific Research, and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10⁶ cm⁻²). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 ± 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.
- Report Numbers:
- E 1.99:lbnl--50186
lbnl--50186 - Subject(s):
- Other Subject(s):
- Note:
- Published through SciTech Connect.
04/30/2002.
"lbnl--50186"
2002 MRS Spring Meeting, San Francisco, CA (US), 04/01/2002--04/05/2002.
Lee, K.Y.; Park, S.S.; Huang, D.; Morkoc, H.; Liliental-Weber, Z.; Yun, F.; Jasinski, J.; Reshchikov, M.A.; Sone, C. - Funding Information:
- AC03-76SF00098
43CA01
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