Dopant and self-diffusion in extrinsic n-type silicon isotopically controlled heterostructures [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 6 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy. Office of Basic Energy Sciences
National Science Foundation (U.S.)
United States. Department of Energy. Office of Scientific and Technical Information
- We present experimental results of dopant- and self-diffusion in extrinsic silicon doped with As. Multilayers of isotopically controlled ²⁸Si and natural silicon enable simultaneous analysis of ³°Si diffusion into the ²⁸Si enriched layers and dopant diffusion throughout the multilayer structure. In order to suppress transient enhanced self- and dopant diffusion caused by ion implantation, we adopted a special approach to dopant introduction. First, an amorphous 250-nm thick Si layer was deposited on top of the Si isotope heterostructure. Then the dopant ions were implanted to a depth such that all the radiation damage resided inside this amorphous cap layer. These samples were annealed for various times and temperatures to study the impact of As diffusion and doping on Si self-diffusion. The Si self-diffusion coefficient and the dopant diffusivity for various extrinsic n-type conditions were determined over a wide temperature range. We observed increased diffusivities that we attribute to the increase in the concentration of the native defect promoting the diffusion.
- Published through SciTech Connect.
2002 MRS Spring Meeting, San Francisco, CA (US), 04/01/2002--04/05/2002.
Haller, Eugene E.; Silvestri, Hughes H.; Bracht, Hartmut A.; Sharp, Ian D.; Hansen, John; Nicols, Sam P.; Beeman, Jeff W.; Nylandsted-Larsen, Arme.
State of California.UC-Smart Program SM97-01 (US)
- Funding Information:
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