Actions for Bistability of Cation Interstitials in II-VI Semiconductors [electronic resource].

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Bistability of Cation Interstitials in II-VI Semiconductors [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
5 pages : digital, PDF file
Additional Creators
National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The stability of cation interstitials in II-VI semiconductors is studied using ab initio methods. We find that interstitials in the neutral charge state are more stable in the tetrahedral interstitial site near the cation, whereas in the (2+) charge state, they are more stable near the anion. The diffusion energy barrier changes when the defect charge state changes. Therefore, if electrons/holes are taken from the defect level by light, changing its charge state, the interstitial atom will be able to diffuse almost spontaneously due to a reduced diffusion barrier.
Report Numbers
E 1.99:nrel/cp-590-38993
nrel/cp-590-38993
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Note
Published through SciTech Connect.
11/01/2005.
"nrel/cp-590-38993"
Wei, S. H.; Dalpian, G. M.
Funding Information
AC36-99-GO10337
View MARC record | catkey: 14448140