Dislocation processes and deformation twinning in nanocrystalline Al [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 4 pages : digital, PDF file
- Additional Creators:
- Argonne National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- Using a recently developed, massively parallel molecular-dynamics (MD) code for the simulation of polycrystal plasticity, we analyze for the case of nanocrystalline Al the complex interplay among various dislocation and grain-boundary processes during low-temperature deformation. A unique aspect of this work, arising from our ability to deform to rather large plastic strains and to consider a rather large grain size, is the observation of deformation under very high grain-boundary and dislocation densities, i.e., in a deformation regime where they compete on an equal footing. We are thus able to identify the intra- and intergranular dislocation and grain-boundary processes responsible for the extensive deformation twinning observed in our simulations. This illustrates the ability of this type of simulations to capture novel atomic-level insights into the underlying deformation mechanisms not presently possible experimentally. smaller grain size, mobile dislocations must be nucleated from other sources, such as the GBs or grain junctions.
- Published through SciTech Connect.
ICCN 2002, San Juan (PR), 04/22/2002--04/25/2002.
Wolf, D.; Gleiter, H.; Phillpot, S.R.; Yamakov, V.
- Funding Information:
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