Actions for Monte Carlo Modeling of Thin Film Deposition [electronic resource] : Factors that Influence 3D Islands

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Monte Carlo Modeling of Thin Film Deposition [electronic resource] : Factors that Influence 3D Islands

Published
Washington, D.C. : United States. Dept. of Energy, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
PDF-file: 7 pages; size: 10.6 Mbytes
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
In this paper we discuss the use of atomistic Monte Carlo simulations to predict film microstructure evolution. We discuss physical vapor deposition, and are primarily concerned with films that are formed by the nucleation and coalescence of 3D islands. Multi-scale modeling is used in the sense that information obtained from molecular dynamics and first principles calculations provide atomic interaction energies, surface and grain boundary properties and diffusion rates for use in the Monte Carlo model. In this paper, we discuss some fundamental issues associated with thin film formation, together with an assessment of the sensitivity of the film morphology to the deposition conditions and materials properties.
Report Numbers
E 1.99:ucrl-jc-146710
ucrl-jc-146710
Other Subject(s)
Note
Published through SciTech Connect.
01/04/2002.
"ucrl-jc-146710"
2002 International Conference on Computational Nanoscience and Nanotechnology, San Juan, Puerto Rico, Apr 22 - Apr 25, 2002.
Baumann, F H; Diaz de la Rubia, T; Gilmer, G H; Dalla Torre, J.
Funding Information
W-7405-ENG-48
View MARC record | catkey: 14448175