Strain mapping on gold thin film buckling and siliconblistering [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators: United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

Report Numbers

E 1.99:lbnl--58979
lbnl--58979

Subject(s)

Materials Science

Other Subject(s)

Note

Published through SciTech Connect.
09/01/2005.
"lbnl--58979"
": KC0204016"
Materials Research Society Spring Meeting, SanFrancisco, CA, 03/28/2005-04/01/2005.
Tamura, N.; Parry, G.; Colin, J.; Goudeau, P.; Padmore, H.; Coupeau, C.; Cleymand, F.
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)

Funding Information

DE-AC02-05CH11231
A580ES

View MARC record | catkey: 14448247