Spectroscopic study of partially-ordered semiconductor heterojunction under high pressure and high magnetic field [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2000. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 13 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Photoluminescence upconversion (PLU) is a phenomenon in which a sample emits photons with energy higher than that of the excitation photon. This effect has been observed in many materials including rare earth ions doped in insulating hosts and semiconductor heterostructures without using high power lasers as the excitation source. Recently, this effect has been observed also in partially CuPt-ordered GaInP₂ epilayers grown on GaAs substrates. As a spectroscopic technique photoluminescence upconversion is particularly well suited for studying band alignment at heterojunction interface. The value of band-offset has been determined with meV precision using magneto-photoluminescence. Using the fact that the pressure coefficient of electrons in GaAs is higher than those in GaInP₂ they have been able to manipulate the band-offset at the GaInP/GaAs interface. By converting the band-offset from Type I to Type II they were able to demonstrate that the efficiency of the upconversion process is greatly enhanced by a Type II band-offset.
- Published through SciTech Connect., 12/31/2000., "lbnl--48891", Application of Spectroscopic Techniques on High Tc Superconducting, Colossal Magnetoresistance and Superlattice Materials, Kunming (CN), 08/27/2000--08/30/2000., and Martinez, G.; Uchida, K.; Zeman, J.; Yu, P.Y.
- Funding Information:
- AC03-76SF00098 and 506201
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