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Control and Elimination of Cracking of AlGaN Using Low-Temperature AlGaN Interlayers [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
15 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We demonstrate that the insertion of low-temperature (LT) AlGaN interlayers is effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks during growth of AlGaN directly upon GaN epilayers., Stress evolution and relaxation is monitored using an in-situ optical stress sensor. The combination of in-situ and ex-situ. characterization techniques enables us to determine the degree of pseudomorphism in the interlayers. It is observed that the elastic tensile mismatch between AlGaN and GaN is mediated by the relaxation of interlayers; the use of interlayers offers tunability in the in-plane lattice parameters.
Report Numbers
E 1.99:sand2000-2261j
sand2000-2261j
Subject(s)
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Note
Published through SciTech Connect.
09/13/2000.
"sand2000-2261j"
Applied Physics Letters FT
HAN,JUNG; FIGIEL,JEFFREY J.; WALDRIP,KAREN NMN; HEARNE,S.J.; LEE,STEPHEN R.; MYERS JR.,SAMUEL M.; PETERSEN,GARY A.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14448786