Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: vp : digital, PDF file
Additional Creators:: Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

No abstract prepared.

Report Numbers:

E 1.99:lbnl--46791
lbnl--46791

Subject(s):

Materials Science

Other Subject(s):

Note:

Published through SciTech Connect.
09/01/2000.
"lbnl--46791"
Physical Review B 64 8 FT
Wu, J.; Yu, K.M.; Haller, E.E.; Tu, C.W.; Ager III, J.W.; Walukiewicz, W.; Shan, W.; Xin, H.P.

Funding Information:

AC03-76SF00098
503920

View MARC record | catkey: 14448805