Increased medium-range order in amorphous silicon with increased substrate temperature [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 7 pages : digital, PDF file
- Additional Creators:
- Argonne National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- Using fluctuation electron microscopy, the authors have measured the medium-range order of magnetron sputtered silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. They find a smooth increase in the medium-range order of the samples, which they interpret in the context of the paracrystalline structural model as an increase in the size of and/or volume fraction occupied by the paracrystalline grains. These data are counter to the long-standing belief that there is a sharp transition between amorphous and polycrystalline structures as a function of substrate temperature.
- Published through SciTech Connect.
8th International Conference on the Structure of Non-Crystalline Materials, Aberystwyth (GB), 08/06/2000--08/11/2000.
Gibson, J. M.; Treacy, M. M. J.; Voyles, P. M.; Gerbi, J. E.; Aberlson, J. R.
- Funding Information:
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