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Increased medium-range order in amorphous silicon with increased substrate temperature [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
7 pages : digital, PDF file
Additional Creators
Argonne National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Using fluctuation electron microscopy, the authors have measured the medium-range order of magnetron sputtered silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. They find a smooth increase in the medium-range order of the samples, which they interpret in the context of the paracrystalline structural model as an increase in the size of and/or volume fraction occupied by the paracrystalline grains. These data are counter to the long-standing belief that there is a sharp transition between amorphous and polycrystalline structures as a function of substrate temperature.
Report Numbers
E 1.99:anl/msd/cp-102632
anl/msd/cp-102632
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Note
Published through SciTech Connect.
08/15/2000.
"anl/msd/cp-102632"
8th International Conference on the Structure of Non-Crystalline Materials, Aberystwyth (GB), 08/06/2000--08/11/2000.
Gibson, J. M.; Treacy, M. M. J.; Voyles, P. M.; Gerbi, J. E.; Aberlson, J. R.
Funding Information
W-31109-ENG-38
View MARC record | catkey: 14448828