Fatigue of polycrystalline silicon for MEMS applications [electronic resource] : Crack growth and stability under resonant loading conditions

Published: Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2001.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: vp : digital, PDF file
Additional Creators: Lawrence Berkeley National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Although bulk silicon is not known to exhibit susceptibility to cyclic fatigue, micron-scale structures made from silicon films are known to be vulnerable to degradation by fatigue in ambient air environments, a phenomenon that has been recently modeled in terms of a mechanism of sequential oxidation and stress-corrosion cracking of the native oxide layer.

Report Numbers

E 1.99:lbnl--49308
lbnl--49308

Subject(s)

Materials Science

Other Subject(s)

Note

Published through SciTech Connect.
12/05/2001.
"lbnl--49308"
Mechanics of Materials 36 1-2 FT
Ritchie, R.O.; Howe, R.T.; Muhlstein, C.L.

Funding Information

AC03-76SF00098
511906

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