Automation, Control and Modeling of Compound Semiconductor Thin-Film Growth [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- vp : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- This report documents the results of a laboratory-directed research and development (LDRD) project on control and agile manufacturing in the critical metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) materials growth processes essential to high-speed microelectronics and optoelectronic components. This effort is founded on a modular and configurable process automation system that serves as a backbone allowing integration of process-specific models and sensors. We have developed and integrated MOCVD- and MBE-specific models in this system, and demonstrated the effectiveness of sensor-based feedback control in improving the accuracy and reproducibility of semiconductor heterostructures. In addition, within this framework we have constructed ''virtual reactor'' models for growth processes, with the goal of greatly shortening the epitaxial growth process development cycle.
- Report Numbers:
- E 1.99:sand99-0111
- Published through SciTech Connect.
Horn, K.M.; Breiland, W.G.; Coltrin, M.E.; Tsao, J.Y.; Drummond, T.J.; Klem, J.F.; Hou, H.Q.
- Type of Report and Period Covered Note:
- Funding Information:
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