Actions for The Band Gap of AlGaN Alloys [electronic resource].

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The Band Gap of AlGaN Alloys [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The band gap of AlXGal.XN is measured for the composition range 0s<0.45; the resulting bowing parameter, b=+O.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlXGal_XN: directly nucleated or buffered growths of AlXGal-XN initiated at temperatures T>800 C on sapphire usually lead to stronger apparent bowing (b> +1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b<+ 1.3 eV). Extant data suggests that the correct band-gap bowing parameter for AlXGal-XN is b=+O.62 (N.45) eV.
Report Numbers
E 1.99:sand99-0274j
sand99-0274j
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Note
Published through SciTech Connect.
01/29/1999.
"sand99-0274j"
"DE00003336"
Applied Physics Letters FT
Wright, A.F.; Lee, S.R.; Petersen, G.A.; Crawford, M.H.; Biefeld, R.M.; Han, J.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14449766