Microstructure of laterally overgrown GaN layers [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2001.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- vp : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy
United States. Air Force. Office of Scientific Research
United States. Department of Energy. Office of Scientific and Technical Information
- Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.
- Published through SciTech Connect.
Journal of Applied Physics 89 12 FT
Liliental-Weber, Zuzanna; Cherns, David.
UK Engineering and Physical Sciences Research Council Grant GR/N16426 (US)
- Funding Information:
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