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Nanohardness and chemical bonding of Boron Nitride films [electronic resource].

Published
Washington, D.C : United States. Dept. of Energy. Office of the Assistant Secretary for Defense Programs, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
vp : digital, PDF file
Additional Creators
Lawrence Livermore National Laboratory, United States. Department of Energy. Office of the Assistant Secretary for Defense Programs, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Boron-nitride (BN) films are deposited by the reactive sputter deposition of fully dense, boron targets utilizing a planar magnetron source and an argon-nitrogen working gas mixture. Near-edge x-ray absorption fine structure analysis reveals distinguishing features of chemical bonding within the boron is photoabsorption cross-section. The hardness of the BN film surface is measured using nanoindentation. The sputter deposition conditions as well as the post-deposition treatments of annealing and nitrogen-ion implantation effect the chemical bonding and the film hardness. A model is proposed to quantify the film hardness using the relative peak intensities of the p*-resonances to the boron 1s spectra.
Report Numbers
E 1.99:ucrl-jc-131691
E 1.99: kc0201050
kc0201050
ucrl-jc-131691
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
07/08/1998.
"ucrl-jc-131691"
" kc0201050"
"KC0201050"
14th International Vacuum Congress, Birmingham (GB), 08/31/1998--09/04/1998.
Jankowski, A F.
Funding Information
W-7405-ENG-48
View MARC record | catkey: 14450161