Molecular dynamics simulations and thermochemistry of reactive ion etching of silicon by chlorine, chlorine dimer, bromine, and bromine dimer cations [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- 7 pages : digital, PDF file
- Additional Creators
- Los Alamos National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Simulations of Cl plasma etch of Si surfaces with MD techniques agree reasonably well with the available experimental information on yields and surface morphologies. This information has been supplied to a Monte Carlo etch profile resulting in substantial agreement with comparable inputs provided through controlled experiments. To the extent that more recent measurements of etch rates are more reliable than older ones, preliminary MD simulations using bond-order corrections to the atomic interactions between neighboring Si atoms on the surface improves agreement with experiment through an increase in etch rate and improved agreement with XPS measurements of surface stoichiometry. Thermochemical and geometric analysis of small Si-Br molecules is consistent with the current notions of the effects of including brominated species in etchant gases.
- Report Numbers
- E 1.99:la-ur--98-2183
E 1.99: conf-980430--
conf-980430--
la-ur--98-2183 - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
05/08/1998.
"la-ur--98-2183"
" conf-980430--"
"DE99000765"
Conference on modeling and simulation of microsystems, semiconductors, sensors and actuators, Santa Clara, CA (United States), 6-8 Apr 1998.
Hanson, D.E.; Kress, J.D.; Valone, S.M. - Funding Information
- W-7405-ENG-36
View MARC record | catkey: 14450246