Modeling Metallic Precipitate Dissolution in Silicon Under Point Defect Injection [electronic resource] : Final Subcontract Report, 20 January 2004--19 January 2005
- Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 13 pages : digital, PDF file
- Additional Creators:
- United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- We have formulated the problem of gettering of metallic precipitates in Si for which there exists a volume misfit between the precipitate and the Si matrix material. The gettering process is modeled using an Al-Si liquid layer, and the volume misfit associated with dissolving the precipitates is assumed as accommodated by point defects, which may be dominated by vacancies (V), self-interstitials (I), or both contributing. Under the condition that V and I attained dynamical equilibrium, we found that for analytic purposes, the problem reduces to either the V or the I alone case, with the fast-diffusing case dominating. Our initial simulation results on gettering of FeSi2 (with a misfit of -0.15) showed that the process can be sped up by the injection of V.
- Report Numbers:
- E 1.99:nrel/sr-520-37991
- Other Subject(s):
- Published through SciTech Connect.
Tan, T. Y.
National Renewable Energy Lab., Golden, CO (US)
- Funding Information:
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