New experimental and analysis methods in I-DLTS [electronic resource].
Published
Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 1998. Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
A new experimental apparatus to perform I-DLTS measurements is presented. The method is shown to be faster and more sensitive than traditional double boxcar I-DLTS systems. A novel analysis technique utilizing multiple exponential fits to the I-DLTS signal from a highly neutron irradiated silicon sample is presented with a discussion of the results. It is shown that the new method has better resolution and can deconvolute overlapping peaks more accurately than previous methods.
Report Numbers
E 1.99:bnl--65290 E 1.99: conf-980355-- conf-980355-- bnl--65290
Published through SciTech Connect. 02/01/1998. "bnl--65290" " conf-980355--" "DE98004440" 2. international conference on radiation effects on semiconductor materials, detectors and devices, Florence (Italy), 4-6 Mar 1998. Li, Z.; Eremin, V.; Pandey, S.U.; Middelkamp, P.