Crystalline Silicon Short-Circuit Current Degradation Study [electronic resource] : Initial Results

Published:: Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 7 pages : digital, PDF file
Additional Creators:: United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Following our observation of slow degradation of short-circuit current (Isc) in crystalline silicon (x-Si) modules that was correlated with ultraviolet (UV) exposure dose, we initiated a new study of individual x-Si cells designed to determine the degradation cause. In this paper, we report the initial results of this study, which has accumulated 1056 MJ/m2 of UV dose from 1-sun metal-halide irradiance, equivalent to 3.8 years at our test site. At this time, the control samples are unchanged, the unencapsulated samples have lost about 2% of Isc, and the samples encapsulated in module-style packages have declined from 1% to 3%, depending on the cell technology.

Report Numbers:

E 1.99:nrel/cp-520-37357
nrel/cp-520-37357

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Note:

Published through SciTech Connect.
02/01/2005.
"nrel/cp-520-37357"
Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005.
Moriarty, T.; Osterwald, C. R.; Pruett, J.
National Renewable Energy Lab., Golden, CO (US)

Funding Information:

AC36-99-GO10337

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