New mechanism for dislocation blocking in strained layer epitaxial growth [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- vp : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- Dislocation interactions play a critical role in plasticity and heteroepitaxial strain relaxation. We use real time transmission electron microscopy observations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addition to the expected long range blocking of threading segments, we observe a new short range mechanism which is significantly more effective. Simulations show that this reactive blocking occurs when two dislocations with the same Burgers vector reconnect.
- Published through SciTech Connect.
Physical Review Letters 84 5 ISSN 0031-9007; PRLTAO FT
Ross, F.M.; Hull, R.; Schwarz, K.W.; Tromp, R.M.; Stach, E.A.
- Funding Information:
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