Structural defect control and photosensitivity in reactively sputtered germanosilicate glass films [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1997.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 9 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- The optical performance of refractive index structures induced in photosensitive (PS) glasses ultimately depends on the index modulation depth attainable. In germanosilicate materials, the photosensitive response is linked to the presence of oxygen-deficient germanium point defect centers. Prior efforts to increase PS in these materials, e.g., hydrogen loading, rely on a chemical reduction of the glass structure to enhance the population of oxygen deficient centers and thus increase the saturated refractive index change. We have previously reported the development of highly photosensitive, as-deposited germanosilicate glass films through reactive atmosphere (O₂/Ar) sputtering from a Ge/Si alloy target. The present work details our investigation of the effect of substrate temperature during deposition on the material structure and propensity for photosensitivity. Using optical absorption/bleaching, Raman, electron paramagnetic resonance (EPR) and selective charge injection techniques we show that the predominate defect states responsible for the PS response can be varied through substrate temperature control. We find that two regimes of photosensitive behavior can be accessed which exhibit dramatically different uv-bleaching characteristics. Thus, the corresponding dispersion of the refractive index change as well as its magnitude can be controlled using our synthesis technique. Tentative defect models for the photosensitive process in materials deposited at both ambient temperature and at elevated substrate temperatures will be presented.
- Published through SciTech Connect.
SPIE international symposium, San Jose, CA (United States), 8-14 Feb 1997.
Warren, W.L.; Ruffner, J.A.; Potter, B.G. Jr.; Simmons-Potter, K.
- Funding Information:
View MARC record | catkey: 14451029