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Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
9 pages : digital, PDF file
Additional Creators
Argonne National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.
Report Numbers
E 1.99:anl/msd/cp-99610
anl/msd/cp-99610
Subject(s)
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Note
Published through SciTech Connect.
07/21/1999.
"anl/msd/cp-99610"
8th International Symposium on Passivity of Metals and Semiconductors, Jasper, Alberta (CA), 05/09/1999--05/15/1999.
Chu, Y.; Nagy, Z.; You, H.; Parkhutik, V.
Funding Information
W-31109-ENG-38
View MARC record | catkey: 14451041