Novel Neo-Pentoxide Precursors for MOCVD Thin Films of TiO(2) and ZrO(2). [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1999. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 22 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Two novel Group IV precursors, titanium (IV) neo-pentoxide, [Ti(μ-ONep)(ONep)₃]₂ (l), and zirconium (IV) neo-pentoxide, [Zr(μ-ONep)(ONep)₃]₂ (2), were reported to possess relatively high volatility at low temperatures. These compounds were therefore investigated as MOCVD precursors using a lamp-heated cold-wall CVD reactor and direct sublimation without carrier gas. The ONep derivatives proved to be competitive precursors for the production of thin films of the appropriate MO₂ (M = Ti or Zr) materials in comparison to other metallo-organic precursors. Compound 1 was found to sublime at 120 C with a deposition rate of ∼0.350 μm/min onto a substrate at 330 C forming the anatase phase with < 1% residual C found in the final film. Compound 2 was found to sublime at 160 C and deposited as crystalline material at 300 C with < 1% residual C found in the final film. A comparison to standard alkoxide and β-diketonates is presented where appropriate.
- Published through SciTech Connect., 07/14/1999., "sand99-1782j", Advance Materials Chemical Vapor Deposition FT, and Boyle, Timothy J.; Rodriguez, Mark A.; Ward, Timothy L.; Gallegos, Jesus J.; Francisco, Laila P.
- Funding Information:
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