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Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
8 pages : digital, PDF file
Additional Creators
Oak Ridge National Laboratory, United States. Department of Energy. Office of Energy Research, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. This makes possible the technique of Z-contrast imaging, a method of forming incoherent images at atomic resolution having high compositional sensitivity. An incoherent image of this nature also allows the positions of atomic columns in a crystal to be directly determined, without the need for model structures and image simulations. Furthermore, atomic resolution chemical analysis can be performed by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. The authors present images of the Si/SiO₂ interface showing no crystalline oxide, compositional profiles across a nitrided sample at 2.5 Å resolution showing an extended sub-stoichiometric zone, and strain profiles at a rough interface showing static rms displacements ∼0.1 Å extending 10 Å into the crystalline Si.
Report Numbers
E 1.99:ornl/cp--97259
E 1.99: conf-980364--
conf-980364--
ornl/cp--97259
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
03/01/1998.
"ornl/cp--97259"
" conf-980364--"
"DE98004883"
"KC0202040"
1998 international conference on characterization and metrology for ULSI technology, Gaithersburg, MD (United States), 23-27 Mar 1998.
Singh, R.; Gao, H.J.; Pennycook, S.J.; Browning, N.D.; Duscher, G.
Funding Information
AC05-96OR22464
View MARC record | catkey: 14451930