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Synthesis, optical properties, and microstructure of semiconductor nanocrystals formed by ion implantation [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
12 pages : digital, PDF file
Additional Creators:
Oak Ridge National Laboratory, United States. Department of Energy. Office of Energy Research, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
High-dose ion implantation, followed by annealing, has been shown to provide a versatile technique for creating semiconductor nanocrystals encapsulated in the surface region of a substrate material. The authors have successfully formed nanocrystalline precipitates from groups IV (Si, Ge, SiGe), III-V (GaAs, InAs, GaP, InP, GaN), and II-VI (CdS, CdSe, CdSₓSe{sub 1−x}, CdTe, ZnS, ZnSe) in fused silica, Al₂O₃ and Si substrates. Representative examples will be presented in order to illustrate the synthesis, microstructure, and optical properties of the nanostructured composite systems. The optical spectra reveal blue-shifts in good agreement with theoretical estimates of size-dependent quantum-confinement energies of electrons and holes. When formed in crystalline substrates, the nanocrystal lattice structure and orientation can be reproducibly controlled by adjusting the implantation conditions.
Report Numbers:
E 1.99:conf-961202--14
conf-961202--14
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Note:
Published through SciTech Connect.
12/01/1996.
"conf-961202--14"
"DE97001646"
1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996.
White, C.W.; Zhu, J.G.; Budai, J.D.; Zuhr, R.A.; Withrow, S.P.
Funding Information:
AC05-96OR22464
View MARC record | catkey: 14452717