Sulfur segregation to oxide/metal interfaces [electronic resource] : a comparison of thermally grown and plasma deposited Al{sub 2}O{sub 3}.
- Published:
- Palo Alto, Calif. : Electric Power Research Institute, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- 16 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
Electric Power Research Institute
United States. Department of Energy. Office of Scientific and Technical Information - Access Online:
- www.osti.gov
- Summary:
- Segregation of S to oxide/metal interfaces was studied using scanning Auger microscopy after removing the oxide film in ultrahigh vacuum. Two types of alumina films were investigated: one formed from oxidation at 1000 C on Fe-28at.%Al-5at.%Cr; the other was deposited on the same alloy via plasma synthesis, where Al was codeposited with O to form an amorphous Al2O3 film, 0.2 or 0.8 μm thick. Subsequent heat treatment of the deposited film at 1000 C caused it to slowly transform to α-Al2O3, and the transformation took place at the film/alloy interface. S segregated to the interface during heat treatment. The amount increased with heat treatment time but was much less than that with scales formed by oxidation. Not all the film/alloy interfaces contained S; the behavior was different from the uniform S coverage found under thermally grown scales. S segregation to the film/alloy interface seems to be controlled by availability of interfacial sites rather than bulk diffusion rates.
- Subject(s):
- Note:
- Published through SciTech Connect.
09/01/1996.
"lbnl--39351"
" conf-960928--2"
"DE97001222"
": Contract 8041-05"
3. international conference on microscopy of oxidation, Cambridge (United Kingdom), 16-18 Sep 1996.
Alexander, K.B.; Brown, I.G.; Wang, Z.; Hou, P.Y.; Pruessner, K. - Funding Information:
- AC03-76SF00098
AC05-84OR21400
View MARC record | catkey: 14452872