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Porous silicon gettering [electronic resource].

Published
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1995.
Physical Description
pages 101-103 : digital, PDF file
Additional Creators
United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 μm of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.
Report Numbers
E 1.99:nrel/sp--413-8250
E 1.99: conf-9508143--extd.absts.
conf-9508143--extd.absts.
nrel/sp--413-8250
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Note
Published through SciTech Connect.
08/01/1995.
"nrel/sp--413-8250"
" conf-9508143--extd.absts."
"DE95009278"
5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995.
Menna, P.; Tsuo, Y.S.; Al-Jassim, M.
National Renewable Energy Lab., Golden, CO (United States)
View MARC record | catkey: 14453505