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Microdefects in nitrogen doped FZ silicon revealed by Li+ drifting [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1995.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
5 pages : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
ULSI technology requires ultra-thin device oxides with excellent breakdown integrity. Recent studies have unveiled degraded dielectric breakdown voltage (DBV) performance of the ultra-thin oxides. These findings suggest that one source for poor oxide integrity is the incorporation of native defects from the Si substrate during oxide growth. Primary defect candidates are D defects which exist mostly in the central region of floating zone (FZ) grown Si crystals. Nitrogen (N) doping eliminates D defects, as detected by conventional means, and improves oxide integrity. Results are presented indicating the prevalence of microdefects in the central region of p-type nitrogen doped FZ Si using the method of Li ion (Li⁺) drifting in an electric field. A model has been developed based on Li interactions in Si which describes the Li⁺ precipitation mechanism. The mechanism establishes that vacancies are the most likely Li⁺ precipitation sites. The results are discussed in relation to breakdown mode patterns of polished FZ Si wafers after gate oxide tests.
Report Numbers
E 1.99:lbl--37561
E 1.99: conf-9507172--3
conf-9507172--3
lbl--37561
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
07/01/1995.
"lbl--37561"
" conf-9507172--3"
"DE96002559"
18. international conference on defects in semiconductors, Sendai (Japan), 23-28 Jul 1995.
Lee, J.S.; Walton, J.T.; Knowlton, W.B.
Funding Information
AC03-76SF00098
View MARC record | catkey: 14453555