Actions for Thin Ni silicide formation by low temperature-induced metal atom reaction with ion implanted amorphous silicon [electronic resource].

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Thin Ni silicide formation by low temperature-induced metal atom reaction with ion implanted amorphous silicon [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1992.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
5 pages : digital, PDF file
Additional Creators
Oak Ridge National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We have extended our recent work on buried silicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si⁺ ion implantation has been investigated at temperature ≤400C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), x-ray diffraction and four-point-probe measurements were used to determine structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360C for 8 hours followed by an additional step at 400C for one hour produces a continuos NiSi₂ layer with a resistivity 44 μΩ cm.
Report Numbers
E 1.99:conf-921101--126
conf-921101--126
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Note
Published through SciTech Connect.
12/31/1992.
"conf-921101--126"
"DE93015449"
16. Materials Research Society (MRS) fall meeting,Boston, MA (United States),30 Nov - 5 Dec 1992.
Rozgonyi, G.A.; Patnaik, B.K.; Erokhin, Yu.N.; Pramanick, S.; Hong, F.
Funding Information
AC05-84OR21400
View MARC record | catkey: 14454813