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Atomic structure of machined semiconducting chips [electronic resource] : An x-ray absorption spectroscopy study

Published
Los Alamos, N.M. : Los Alamos National Laboratory, 1988.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
pages 189-194 : digital, PDF file
Additional Creators
Los Alamos National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
X-ray absorption spectroscopy (XAS) has been used to examine the atomic structure of chips of germanium that were produced by single point diamond machining. It is demonstrated that although the local (nearest neighbor) atomic structure is experimentally quite similar to that of single crystal specimens information from more distant atoms indicates the presence of considerable stress. An outline of the technique is given and the strength of XAS in studying the machining process is demonstrated.
Report Numbers
E 1.99:la-sub--93-81
la-sub--93-81
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
12/01/1988.
"la-sub--93-81"
"DE97003578"
Paesler, M.; Sayers, D.
View MARC record | catkey: 14455153