Status of ion implantation doping and isolation of III-V nitrides [electronic resource].
- Arlington, Va. : National Science Foundation (U.S.), 1995. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 8 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, National Science Foundation (U.S.), and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Ion implantation doping and isolation has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and AlN) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. With this in mind, we review the status of implant doping and isolation of GaN and the ternary alloys AlGaN, InGaN, and InAlN. In particular, we reported on the successful n- and p-type doping of GaN by ion implantation of Mg+P and Si, respectively, and subsequent high temperature rapid thermal anneals in excess of 1000°C. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N or F implantation.
- Published through SciTech Connect., 09/01/1995., "sand--95-0949c", " conf-951007--5", "DE95017888", 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995., and Abernathy, C.R.; Zolper, J.C.; Pearton, S.J.
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