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Silicon on insulator structures in selective epitaxial growth [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
8 pages : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Silicon-on-insulator structures were formed by the selective epitaxial growth (SEG) of silicon and the epitaxial lateral overgrowth (ELO) of oxide shapes using an LPCVD hot-walled reactor at 850°C. The homoepitaxial interface changed character with modifications of the gas composition during the in-situ pre-epitaxial bake at 900°C. HREM images show ellipsoid-shaped inclusions lying along the homoepitaxial interface for silicon growth conduced with no dichlorosilane (DCS) flow during the prebake in H₂. SIMS analysis indicates a large oxygen, fluorine, and carbon concentration at the interface. For structures grown with a small DCS flow in addition to H₂ during the prebake, the homoepitaxial structural defects and the oxygen, fluorine, and carbon peaks are removed.
Report Numbers
E 1.99:lbl--31609
E 1.99: conf-911202--83
conf-911202--83
lbl--31609
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
11/01/1991.
"lbl--31609"
" conf-911202--83"
"DE92017118"
Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991.
Gronsky, R.; Lou, J.; Weng, Z.; Oldham, W.
Funding Information
AC03-76SF00098
View MARC record | catkey: 14455398