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InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.
Report Numbers
E 1.99:sand98-2631j
sand98-2631j
Subject(s)
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Note
Published through SciTech Connect.
11/24/1998.
"sand98-2631j"
"DE00002000"
Applied Physics Letters FT
Banas, J.J.; Jones, E.D.; Kurtz, S.R.; Gee, J.M.; Hammons, B.E.; Allerman, A.A.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14455457