Defect and dopant diffusion in ion implanted silcon [electronic resource] : an atomic scale simulation approach
- Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 639 Kilobytes : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy. Office of Energy Research
United States. Department of Energy. Office of Scientific and Technical Information
- We present an atomistic approach to the development of predictive process simulation tools. First principles methods are used to construct a database of defect and dopant energetics. This is used as input for kinetic Monte Carlo simulations of ion implantation and dopant diffusion under a wide variety of technologically relevant conditions. Our simulations are in excellent agreement with annealing experiments on 20-80 keV B implants into Si, and with those on 50 keV Si implants into complex B-doped structures. Our calculations produce novel predictions of the time evolution of the electrically active B fraction during annealing.
- Published through SciTech Connect.
International Electron Devices Meeting, San Francisco, CA, December 6-9, 1998.
Diaz de la Rubia, T; Theiss, S K; Carturla, M J; Lenosky, T J.
- Funding Information:
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