New Thin Film CuGaSe2/Cu(In,Ga)Se2 Bifacial, Tandem Solar Cell with Both Junctions Formed Simultaneously [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 7 pages : digital, PDF file
Additional Creators:: United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Thin films of CuGaSe2 and Cu(In,Ga)Se2 were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n+/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60C. The resulting four-terminal device is a non-mechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (h= 3.7%, Voc= 1.1 V[AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.

Report Numbers:

E 1.99:nrel/cp-520-31440
nrel/cp-520-31440

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Note:

Published through SciTech Connect.
05/01/2002.
"nrel/cp-520-31440"
Presented at the 29th IEEE PV Specialists Conference, New Orleans, LA (US), 05/20/2002--05/24/2002.
Young, D. L.; Ward, J. S.; Keane, J.; Li, X.; Noufi, R.; Coutts, T. J.; Gessert, T. A.; Symko-Davies, M.; Abu-Shama, J.; Contreas, M.
National Renewable Energy Lab., Golden, CO. (US)

Funding Information:

AC36-99-GO10337

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