Oxidation of ion-implanted NiAl [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1994.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 7 pages : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- The oxidation of NiAl is complicated by the formation of transient alumina phases which result in convoluted scales which are prone to spallation. We have investigated high-dose implantation of oxygen as a technique for forming a protective oxide layer on the surface of NiAl and thereby bypassing the conditions that lead to transient oxide formation. Single crystal specimens of high purity NiAl were implanted with 1 × 10¹⁸ ¹⁸O ions/cm² at 160 keV. Implanted specimens were annealed for times ranging from 5 to 60 minutes in a reducing atmosphere. Oxidation experiments were conducted for periods ranging from 1 hour to 42 hours under both cyclic and isothermal conditions. Specimens in the as-implanted, annealed, and oxidized conditions were examined using Auger electron microscopy. Oxygen implantation followed by annealing was found to form an epitaxial oxide layer. This layer is stable for the duration of the oxidation experiments conducted in this study, and was found to result in reduced oxidation and improved resistance to scale spallation.
- Report Numbers:
- E 1.99:conf-941016--3
- Other Subject(s):
- Published through SciTech Connect.
Materials week `94,Rosemont, IL (United States),3-7 Oct 1994.
Withrow, S.P.; Hanrahan, R.J. Jr.; Verink, E.D. Jr.
- Funding Information:
View MARC record | catkey: 14455615