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Magnetron sputtered boron films and Ti/B multilayer structures [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
20 pages : digital, PDF file
Additional Creators
Lawrence Livermore National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.
Report Numbers
E 1.99:patents-us--a7666971
patents-us--a7666971
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
03/11/1991.
"patents-us--a7666971"
"DE93002022"
Jankowski, A.F.; Makowiecki, D.M.
Funding Information
W-7405-ENG-48
View MARC record | catkey: 14455666