Thin EFG octagons. Semiannual subcontract report, 1 April 1993--30 September 1993 [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1994.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 23 pages : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Office of Management
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- This report describes work to advance the manufacturing line capabilities in crystal growth and laser cutting of Mobil Solar`s unique edge-defined film-fed growth (EFG) octagon technology and to reduce the manufacturing costs of 10-cm × 10-cm polycrystalline silicon EFG wafers. The report summarizes the significant technical improvements in EFG technology achieved in the first 6 months of the PVMaT Phase 2 and the success in meeting program milestones. Technical results are reported for each of the three main pregrain areas: Task 5 -0 -- Thin octagon growth (crystal growth) -- to reduce the thickness of the octagon to 200 microns; Task 6 -- Laser cutting-to improve the laser cutting process so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and Task 7 -- Process control and product specification --to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.
- Published through SciTech Connect.
National Renewable Energy Lab., Golden, CO (United States)
- Type of Report and Period Covered Note:
- Semiannual; 01/01/1993 - 06/30/1993
- Funding Information:
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