Actions for Creep behavior of MoSi{sub 2}-SiC composites [electronic resource].

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Creep behavior of MoSi{sub 2}-SiC composites [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
7 pages : digital, PDF file
Additional Creators
Los Alamos National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Using a cylindrical indenter, indentation creep behavior of hot pressed and HIPed MoSi₂-SiC composites containing 0--40% SiC by volume, was characterized at 1000--1200C, 258--362 MPa. Addition of SiC affects the creep behavior of MoSi₂ in a complex manner by pinning grain boundaries during pressing, thus leading to smaller MoSi₂ grains; by obstructing or altering both dislocation motion and grain boundary sliding; and by increasing the overall yield stress of the material. Comparisons are made between indentation and compressive creep studies. It is shown that under certain conditions, compressive creep and indentation creep measurements yield comparable results after correcting for effective stresses and strain rates beneath the indenter.
Report Numbers
E 1.99:la-ur--93-4288
E 1.99: conf-931108--30
conf-931108--30
la-ur--93-4288
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
12/31/1993.
"la-ur--93-4288"
" conf-931108--30"
"DE94004980"
Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993.
Kung, H.; Petrovic, J.J.; Korzekwa, D.A.; Maloy, S.A.; Butt, D.P.
Funding Information
W-7405-ENG-36
View MARC record | catkey: 14456000