The effect of co-implantation on the electrical activity of implanted carbon in GaAs [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 6 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- We have undertaken a systematic study of the effect of co- implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co- implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C. Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950°C for 10s resulted in carbon activation as high as 68%, the highest value ever reported.
- Published through SciTech Connect.
Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991.
Hansen, W.L.; Yu, K.M.; Haller, E.E.; Walukiewicz, W.; Moll, A.J.
- Funding Information:
View MARC record | catkey: 14456798