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Dispersion aspects of silicon carbide gelcasting [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
34 pages : digital, PDF file
Additional Creators:
Oak Ridge National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
The principal objective of this research was to increase the solid loading of silicon carbide (SiC) powder, in an appropriate liquid medium, to a level that is useful for gelcasting technology. A number of factors that determine the maximum concentration of silicon carbide that can be incorporated into a pourable ceramic suspension have been identified. The pH of the system is the most critical processing parameter. Its proper adjustment (pH 11 to 13) allows SiC concentrations exceeding 50%, based on volume, to be routinely achieved without the use of additional dispersing agents. The particle size of SiC was also found to affect the maximum, attainable concentration. The surface area of the powder and the presence of free carbon in the powder, though not significantly influencing the suspension properties, determine the concentration of initiator required to induce polymerization and gelation. SiC specimens have been gelcast for powders in the size range of 0.8 to 8.5 μm; the powders employed contain either ∼ 0 or 19% carbon by weight. Finally, the generation of bubbles, typically encountered by the use of ammonia to adjust pH has been circumvented by the use of tetramethylammonium hydroxide.
Report Numbers:
E 1.99:ornl/tm--11843
ornl/tm--11843
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
09/01/1991.
"ornl/tm--11843"
"DE92018518"
Bleier, A.
Type of Report and Period Covered Note:
Topical; 09/01/1991 - 09/01/1991
Funding Information:
AC05-84OR21400
View MARC record | catkey: 14456861