Nitrogen-Induced Evolution of GaAs1-xNx Studied by Ballistic Electron Emission Spectroscopy [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: pages 7-8 : digital, PDF file
Additional Creators:: National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Giant bandgap reduction of dilute GaAs1-xNx with nitrogen incorporation makes this material to be very attractive for conversion efficiency increase in multijunction, high efficiency solar cells.

Report Numbers:

E 1.99:909659

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Note:

Published through SciTech Connect.
01/01/2000.
Addendum to the Proceedings: NCPV Program Review Meeting 2000, 16-19 April 2000, Denver Colorado; NREL/BK-520-28064.
Zhang, Y.; Tu, C. W.; Mascarenhas, A.; Kozhevnikov, M.; Narayanamurti, V.; Xin, H. P.

Funding Information:

AC36-99-GO10337

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