Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, May 13, 1994--May 12, 1995 [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 1995.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: 73 pages : digital, PDF file
Additional Creators: United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

The continuous decay of electron drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking was investigated by the photomixing technique. The photoconductivity, lifetime and drift mobility in intrinsic hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) while light-soaking were determined using a photomixing technique. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2 for 20 hour light soaking at 2.5 sun intensity. Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking.

Report Numbers

E 1.99:nrel/tp--451-20019
nrel/tp--451-20019

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Note

Published through SciTech Connect.
10/01/1995.
"nrel/tp--451-20019"
"DE95013131"
Yang, Y; Braunstein, R; Dong, S.
National Renewable Energy Lab., Golden, CO (United States)

Funding Information

AC36-83CH10093

View MARC record | catkey: 14456896