Actions for In situ studies of amorphization of the Ge-Al and Si-Al systems induced by 1 MeV electron irradiation [electronic resource].

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In situ studies of amorphization of the Ge-Al and Si-Al systems induced by 1 MeV electron irradiation [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1990.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
29 pages : digital, PDF file
Additional Creators
Argonne National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Ge/Al and Si/Al bilayer specimens, as well as Al-2.3 at. % Ge two-phase alloy specimens, were irradiated in situ with 1 MeV electrons at temperatures in the range 10--190 K in a high voltage electron microscope. At 10 K, it is found that for a Ge/Al bilayer specimen, amorphization at the interface occurs only when the Ge layer faces the incident electron beam, while for a Si/Al bilayer specimen amorphization occurs regardless of the direction of the incident beam. In this case, the critical fluence for amorphization (Φ{sub c}) to occur is ≈ 3 × 10²³ cm{sup −2} (≈ 30,19 and 18 displacements per atom in Ge, Si and Al respectively). In the case of Al -- 2.3 at. % Ge alloy specimens irradiated at 10 and 50 K a crystalline-to-amorphous (c-to-a) transition is observed at Φ{sub c} ≈ 2.4 × 10²³ cm{sup −2} (24 and 14 dpa in Ge and Al respectively). The temperature dependence of Φ{sub c} is also studied for a Ge/Al bilayer specimen. The value of Φ{sub c} is a constant for T < ≈ 160, and then it increases rapidly with increasing T; Φ{sub c} becomes immeasurably large at a critical temperature of ≈ 190 K. The results can be understood in terms of an electron-irradiation-induced recoil-implantation mechanism.
Report Numbers
E 1.99:anl/msd/pp--71721
anl/msd/pp--71721
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Other Subject(s)
Note
Published through SciTech Connect.
10/01/1990.
"anl/msd/pp--71721"
"DE94012630"
Lin, X.W.; Seidman, D.N.; Okamoto, P.R.
Type of Report and Period Covered Note
Topical; 10/01/1990 - 10/01/1990
Funding Information
W-31109-ENG-38
View MARC record | catkey: 14457063