Chemical and electrical properties of cavities in silicon and germanium [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 1994.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: 23 pages : digital, PDF file
Additional Creators: Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Cavities were formed in Si and Ge by He ion implantation and annealing, and resultant chemical and electrical properties were investigated. The dissociation energies for Si-H and Ge-H surface monohydride bonds were determined, showing that H chemisorption on Si is energetically stable with respect H₂ gas whereas H chemisorption on Ge is not. Cavity walls in Si were found to trap transition metals strongly, suggesting application to impurity gettering in devices. Measurement and modeling of cavity electrical properties elucidated surface electronic states and indicated a potential for controlled electrical isolation in devices. 35 refs.

Report Numbers

E 1.99:sand--94-2299c
E 1.99: conf-950220--4
conf-950220--4
sand--94-2299c

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Note

Published through SciTech Connect.
12/31/1994.
"sand--94-2299c"
" conf-950220--4"
"DE95006812"
9. international conference on ion beam modification of materials, Canberra (Australia), 5-10 Feb 1995.
Stein, H.J.; Petersen, G.A.; Wampler, W.R.; Follstaedt, D.M.; Seager, C.H.; Myers, S.M.

Funding Information

AC04-94AL85000

View MARC record | catkey: 14457106