In-situ characterization of growth and interfaces in a-Si [electronic resource] : H devices. Annual subcontract report, 1 May 1992--30 April 1993
- Washington, D.C. : United States. Dept. of Energy, 1994.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 78 pages : digital, PDF file
- Additional Creators:
- United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- This report describes work to reach two goals--an individual goal and a wide-gap team goal. The individual goal was to investigate the ``top junction`` for defects using the spectroscopic ellipsometry technique. This will include an evaluation if specific defects are associated with C, B, Sn (diffusing from the transparent conducting oxide [TCO]) or Na (diffusing from the glass). It may include an assessment of the function of a graded a-SiC:H buffer layer. As defects are identified and characterized, their influence on the transport properties will be assessed. This should lead to better parameters used as input to models for the electronic materials and device performance. The goal of the wide-gap team was to demonstrate, characterize, and understand improved doped and undoped ``wide gap`` materials for use in achieving 15%-efficient stabilized photovoltaic modules (``wide gap`` materials are defined by this team to have a band gap ≥ 1.9 eV). The major conclusions of the research are discussed in the report.
- Report Numbers:
- E 1.99:nrel/tp--451-6135
- Other Subject(s):
- Published through SciTech Connect.
Collins, R.W.; Lu, Y.; Nguyen, H.V.; Wronski, C.R.; An, I.
National Renewable Energy Lab., Golden, CO (United States)
Pennsylvania State Univ., University Park, PA (United States)
- Type of Report and Period Covered Note:
- Annual; 01/01/1992 - 12/31/1993
- Funding Information:
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