Investigations of the origins of metastable light-induced changes in hydrogenated amorphous silicon. Final subcontract report, April 1, 1988--March 31, 1991 [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1991. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 36 pages : digital, PDF file
- Additional Creators:
- United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- The work performed for this contract continued investigations of the origins of metastable effectS in a-Si:H through three kinds of studies: (1) the effect of carbon impurities in a-Si:H samples at low concentrations using drive-level capacitance profiling measurements on samples whose carbon content was intentionally modulated spatially during growth, (2) the characterization of metastable states in n-type doped a Si:H samples caused by quench cooling and by light-soaking with partial annealing, and (3) the use of depletion-width-modulated ESR spectroscopy together with junction capacitance spectroscopy to investigate deep defect states for various metastable states of a 10- and an 80-Vppm PH₃-doped a-Si:H sample.
- Published through SciTech Connect., 12/01/1991., "nrel/tp--214-4592", "DE92001178", Cohen, J.D., National Renewable Energy Lab., Golden, CO (United States), and Oregon Univ., Eugene, OR (United States)
- Type of Report and Period Covered Note:
- Final; 12/31/1991 - 12/31/1991
- Funding Information:
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