Actions for Grain growth in Al-2% Cu thin films [electronic resource].

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Grain growth in Al-2% Cu thin films [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: (8 pages) : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The grain size and grain growth kinetics in sputter deposited Al-2% Cu films on silicon substrates were determined by TEM for various film thicknesses and anneal times, temperatures and methods. Grain sizes were found to be typically lognormally distributed. The as- deposited grain size (d{sub o}) dependence on film thickness (TH) was found to be d{sub o} = C TH{sup ½}, due to competitive grain growth during film formation. Annealed grain size (d) after Rapid Thermal Annealing (RTA) for time (t) at temperature (T) is described by the general equation d − do = C TH{sup 0.7} {l brace}t exp (−ΔE{sub a}/kT){r brace}{sup 1/8}, where ΔE{sub a} = 0.85 ev for 0.4 μm films and ΔE{sub a} = 1.1 ev for 0.8 μm films. Grain growth is largely saturated for these anneals. Grain growth is shown to be more extensive during RTA anneals than furnace annealing and more extensive in 0.4 μm films than 0.8 μm films for equivalent RTA cycles. The results are discussed in terms of models, simulations and previous results of grain growth in thin metal films. 21 refs., 4 figs.
Report Numbers
E 1.99:lbl-31203
E 1.99: conf-9106101--2
conf-9106101--2
lbl-31203
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
06/01/1991.
"lbl-31203"
" conf-9106101--2"
"DE92002263"
International conference on grain growth in polycrystalline materials, Rome (Italy), 18-21 Jun 1991.
Sanchez, J.E. Jr.; Morris, J.W. Jr.; Frear, D.R.
Funding Information
AC03-76SF00098
View MARC record | catkey: 14457943