Sequential deposition etch techniques for the selective deposition of tungsten [electronic resource].
- Albuquerque, N.M. : Sandia National Laboratories, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: (7 pages) : digital, PDF file
- Additional Creators:
- Sandia National Laboratories
United States. Department of Energy. Office of Scientific and Technical Information
- We report on the use of a deposition/etch approach to the loss of selectivity problem, using high activity fluorine chemistries in the etch step. Proof-of-concept experiments were initially performed in a hot wall system, the excellent results obtained lead us to prove out the concept in a commercially available cold wall Genus reactor. We observed that WF₆ is ineffective as an etchant of W. The technique has been able to produce perfectly selective depositions 1 micron thick in both hot wall, and cold wall, systems. Sheet resistivity values and film morphology are good. 9 refs., 4 figs., 1 tab.
- Published through SciTech Connect.
1991 tungsten workshop, Murray Hill, NJ (United States), 8 Oct 1991.
Fleming, J.G.; Dominguez, F.; Omstead, T.R.
- Funding Information:
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