Sequential deposition etch techniques for the selective deposition of tungsten [electronic resource].
- Published:
- Albuquerque, N.M. : Sandia National Laboratories, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- Pages: (7 pages) : digital, PDF file
- Additional Creators:
- Sandia National Laboratories and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- We report on the use of a deposition/etch approach to the loss of selectivity problem, using high activity fluorine chemistries in the etch step. Proof-of-concept experiments were initially performed in a hot wall system, the excellent results obtained lead us to prove out the concept in a commercially available cold wall Genus reactor. We observed that WF₆ is ineffective as an etchant of W. The technique has been able to produce perfectly selective depositions 1 micron thick in both hot wall, and cold wall, systems. Sheet resistivity values and film morphology are good. 9 refs., 4 figs., 1 tab.
- Report Numbers:
- E 1.99:sand-91-2229c
E 1.99: conf-9110240--1
conf-9110240--1
sand-91-2229c - Subject(s):
- Other Subject(s):
- Note:
- Published through SciTech Connect.
01/01/1991.
"sand-91-2229c"
" conf-9110240--1"
"DE92000953"
1991 tungsten workshop, Murray Hill, NJ (United States), 8 Oct 1991.
Fleming, J.G.; Dominguez, F.; Omstead, T.R. - Funding Information:
- AC04-76DP00789
View MARC record | catkey: 14458046