Defect and impurity effects on the initial growth of Ag on Si(111) [electronic resource].

Published: Washington, D.C : United States. Dept. of Energy. Office of Energy Research, 1990.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: Pages: (23 pages) : digital, PDF file
Additional Creators: Oak Ridge National Laboratory, United States. Department of Energy. Office of Energy Research, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Step and impurity effects on the initial growth of a thin film have been demonstrated in the (√3 × √3)R30° domain growth of Ag on Si(111) using high angular resolution LEED. Anisotropy in the √3 domain shape and growth during deposition are found on the stepped Si(111) with the preferential growth along the step edge direction. The √3 superlattice grows with coverage principally by domain coalescence at the temperature T ∼ 450°C and is self-similar at different coverages (scaling) as observed on a flat Si(111). The size distribution is shown to follow a Gamma distribution by a simple model calculation. A dramatic change in the growth mechanism is observed when oxygen impurities (≤0.02 ML) appear. The √3 domains in the presence of impurities grow with coverage more randomly and isotropically in contrast with the step edge effects and coalescence is inhibited. As a result, the √3 superlattice stays in a microdomain morphology without long range order. 17 refs., 6 figs.

Report Numbers

E 1.99:conf-901035-8
conf-901035-8

Subject(s)

Materials Science

Other Subject(s)

Note

Published through SciTech Connect.
10/01/1990.
"conf-901035-8"
"DE91001277"
37. national American Vacuum Society symposium, Toronto (Canada), 8-12 Oct 1990.
Zuo, J.K.; Wendelken, J.F.

Funding Information

AC05-84OR21400

View MARC record | catkey: 14458101